Conduction Response in Highly Flexible Nonvolatile Memory Devices-Reference-Cited by-同舟云学术

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Conduction Response in Highly Flexible Nonvolatile Memory Devices

Published:2020-04-13 Issue:5 Volume:6 Page:2000151
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ren Shuxia¹,Li Zhenhua¹,Tang Lingzhi¹,Su Xiao¹,Zhang He²,Zhang Guanglei¹,Zhang Han³,Cao Guozhong⁴^ORCID,Zhao Jinjin¹

Affiliation:

1. School of Materials Science and Engineering, School of Mechanical EngineeringShijiazhuang Tiedao University Shijiazhuang 050043 China

2. College of Civil Engineering and ArchitectureZhejiang University Hangzhou 310058 China

3. Key Laboratory of Noise and VibrationInstitute of Acoustics, Chinese Academy of Sciences Beijing 100190 China

4. Department of Materials Science and EngineeringUniversity of Washington Seattle WA 98195‐2120 USA

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000151

Reference51 articles.

1. Resistance random access memory

2. Who Wins the Nonvolatile Memory Race?

3. Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device

4. Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applications

5. Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin-film Transistor Applications

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