High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots-Reference-Cited by-同舟云学术

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High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots

Published:2023 Issue:0 Volume:0 Page:2301033
ISSN:1000-6818
Container-title:Acta Physico Chimica Sinica
language:en
Short-container-title:

Author:

Ren Shuxia,Yang Zheng,An Shuailling,Meng Jie,Liu Xiaomin,Zhao Jinjin

Publisher

Acta Physico-Chimica Sinica & University Chemistry Editorial Office, Peking University

Subject

Physical and Theoretical Chemistry

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light-induced multilevel resistive switching in cesium-doped lead-free halide double perovskite memory device;Journal of Alloys and Compounds;2024-11

2. Bipolar resistive switching behavior of PVA/g-C3N4 quantum dots hybrid thin films;Journal of Alloys and Compounds;2024-11

3. In Situ Formation of Iodide Precursor for Perovskite Quantum Dots with Application in Efficient Solar Cells;Small;2024-08-14

4. Heterogeneous interface engineering enabling homogeneous metal halide perovskite nanowires for artificial synapses;Materials Today Nano;2024-03

5. Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite;Journal of Inorganic Materials;2023

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