Liquid‐Phase Exfoliated Gallium Selenide for Light‐Driven Thin‐Film Transistors-Reference-Cited by-同舟云学术

Liquid‐Phase Exfoliated Gallium Selenide for Light‐Driven Thin‐Film Transistors

Published:2021-01-25 Issue:3 Volume:7 Page:2001080
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Curreli Nicola¹²,Serri Michele¹,Zappia Marilena Isabella³⁴,Spirito Davide²,Bianca Gabriele¹⁵,Buha Joka²,Najafi Leyla¹³,Sofer Zdeněk⁶,Krahne Roman²,Pellegrini Vittorio¹³,Bonaccorso Francesco¹³^ORCID

Affiliation:

1. Graphene Labs Istituto Italiano di Tecnologia via Morego 30 Genova 16163 Italy

2. Nanochemistry Department Istituto Italiano di Tecnologia via Morego 30 Genova 16163 Italy

3. BeDimensional Spa Via Lungotorrente secca 3d Genova 16163 Italy

4. Physics Department University of Calabria via P. Bucci, Cubo 31/C Rende 87036 Italy

5. Dipartimento di Chimica e Chimica Industriale Università degli Studi di Genova via Dodecaneso 31 Genoa 16146 Italy

6. Department of Inorganic Chemistry University of Chemistry and Technology Technická 5 Prague 6 16628 Czech Republic

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001080

Reference159 articles.

1. Memristive devices based on emerging two-dimensional materials beyond graphene

2. Quantum engineering of transistors based on 2D materials heterostructures

3. Mixed-dimensional van der Waals heterostructures

4. Two-dimensional semiconductors for transistors

5. Van der Waals heterostructures

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