MBE Growth and Device Applications of Ga2 O3
Author:
Affiliation:
1. National Institute of Information and Communications Technology; Tokyo 184-8795 Japan
Publisher
John Wiley & Sons Ltd
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119354987.ch25/fullpdf
Reference47 articles.
1. Polymorphism of Ga2O3 and the System Ga2O3—H2O
2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
3. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
4. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases
5. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
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3. Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer;Journal of Applied Physics;2022-11-21
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