Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin‐Film Transistors-Reference-Cited by-同舟云学术

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Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin‐Film Transistors

Published:2020-02-24 Issue:8 Volume:8 Page:1901833
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Han Zuyin¹²^ORCID,Liang Huili¹³,Huo Wenxing¹²,Zhu Xiaoshan¹,Du Xiaolong¹²³,Mei Zengxia¹³

Affiliation:

1. Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences Beijing 100190 P. R. China

2. School of Physical SciencesUniversity of Chinese Academy of Sciences Beijing 100049 China

3. Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901833

Reference31 articles.

1. Room-Temperature Fabricated Amorphous Ga2 O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

2. Enhanced photoresponse performance in Ga/Ga 2 O 3 nanocomposite solar-blind ultraviolet photodetectors

3. Surface plasmon enhanced solar-blind photoresponse of Ga2O3 film with Ga nanospheres

4. High performance, flexible and room temperature grown amorphous Ga2O3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes

5. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

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1. Hetero-interface boosted high-performance a-Ga2O3 thin-film phototransistors;Applied Surface Science;2025-01

2. High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3;Applied Surface Science;2025-01

3. Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors;Applied Surface Science;2024-12

4. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

5. Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors;Sensors;2024-09-07

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