Ambipolar Graphene-Quantum Dot Phototransistors with CMOS Compatibility-Reference-Cited by-同舟云学术

Ambipolar Graphene-Quantum Dot Phototransistors with CMOS Compatibility

Published:2018-10-04 Issue:23 Volume:6 Page:1800985
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Zheng Li¹^ORCID,Zhou Wenjia²,Ning Zhijun²,Wang Gang³,Cheng Xinhong¹,Hu Weida⁴,Zhou Wen¹,Liu Zhiduo⁵,Yang Siwei¹,Xu Kaimin²,Luo Man⁴,Yu Yuehui¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; Shanghai 200050 China

2. School of Physical Science and Technology; ShanghaiTech University; Shanghai 201210 China

3. Department of Microelectronic Science and Engineering; Faculty of Science; Ningbo University; Ningbo 315211 China

4. State Key Laboratory of Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083 China

5. State Key Laboratory of Integrated Optoelectronics; CAS Center for Excellence in Brain Science and Intelligence Technology; Institute of Semiconductors; Chinese Academy of Sciences; Beijing 100049 China

Funder

National Natural Science Foundation of China

Shanghai Sailing Program

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adom.201800985/fullpdf

Reference42 articles.

1. Broadband image sensor array based on graphene–CMOS integration

2. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor