Near‐Infrared, Self‐Powered and Polarization‐Sensitive Photodetector Based on GeSe–MoTe 2 p–n Heterojunction
Author:
Affiliation:
1. Institute of Semiconductors South China Normal University Guangzhou 510631 P. R. China
2. Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200150
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5. Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2Heterojunctions
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