Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2Heterojunctions-Reference-Cited by-同舟云学术

Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2Heterojunctions

Published:2015-08-21 Issue:40 Volume:11 Page:5430-5438
ISSN:1613-6810
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language:en
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Author:

Huo Nengjie¹,Yang Juehan¹,Huang Le¹,Wei Zhongming¹,Li Shu-Shen¹,Wei Su-Huai²,Li Jingbo¹

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures; Institute of Semiconductors; Chinese Academy of Sciences; P.O. Box 912 Beijing 100083 China

2. National Renewable Energy Laboratory; 15013 Denver West Parkway Golden CO 80401 USA

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201501206/fullpdf

Reference35 articles.

1. Control of valley polarization in monolayer MoS2 by optical helicity

2. Single-layer MoS2 transistors

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

5. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

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