Critical Role of Terminating Layer in Formation of 2DEG State at the LaInO <sub>3</sub> /BaSnO <sub>3</sub> Interface-Reference-Cited by-同舟云学术

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Critical Role of Terminating Layer in Formation of 2DEG State at the LaInO ₃ /BaSnO ₃ Interface

Published:2022-09-30 Issue:32 Volume:9 Page:2201781
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Kim Seonghyeon¹^ORCID,Lippmaa Mikk²,Lee Jaehyeok¹^ORCID,Cho Hyeongmin¹^ORCID,Kim Juhan¹^ORCID,Kim Bongju¹³⁴^ORCID,Char Kookrin¹^ORCID

Affiliation:

1. Institute of Applied Physics Department of Physics and Astronomy Seoul National University Seoul 08826 Republic of Korea

2. Institute for Solid State Physics University of Tokyo Kashiwa 277–8581 Japan

3. Center for Correlated Electron Systems (CCES) Institute for Basic Science (IBS) Seoul 08826 Republic of Korea

4. Department of Physics and Astronomy Seoul National University Seoul 08826 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201781

Reference36 articles.

1. Two-dimensional electron gas at a semiconductor-semiconductor interface

2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

3. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

4. Quantum Hall Effect in Polar Oxide Heterostructures

5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface;APL Materials;2023-12-01

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