Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials-Reference-Cited by-同舟云学术

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Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials

Published:2021-05-06 Issue:11 Volume:8 Page:2100014
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Miikkulainen Ville¹²^ORCID,Vehkamäki Marko¹^ORCID,Mizohata Kenichiro³^ORCID,Hatanpää Timo¹^ORCID,Ritala Mikko¹^ORCID

Affiliation:

1. Department of Chemistry University of Helsinki P.O. BOX 55 (A.I. Virtasen aukio 1) Helsinki FI‐00014 Finland

2. Department of Chemistry and Materials Science Aalto University Kemistintie 1 Espoo 02150 Finland

3. Department of Physics P.O. Box 43 (Pietari Kalmin katu 2) Helsinki FI‐00014 Finland

Funder

Semiconductor Research Corporation

Academy of Finland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100014

Reference33 articles.

1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

2. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

3. Perspective: New process technologies required for future devices and scaling

4. Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition

5. Self-Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective-Area Atomic Layer Deposition of Iridium

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4. Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al₂O₃;Journal of Vacuum Science & Technology A;2022-07

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