Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device-Reference-Cited by-同舟云学术

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Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device

Published:2022-06-09 Issue:20 Volume:9 Page:2200392
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Jeon Kanghyeok¹²,Ryu Jin Joo¹,Jeong Doo Seok²,Kim Gun Hwan¹^ORCID

Affiliation:

1. Division of Advanced Materials Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong‐Ro, Yuseong‐Gu Daejeon 34114 Republic of Korea

2. Division of Materials Science and Engineering Hanyang University Wansimni‐ro 222, Seongdong‐gu Seoul 04763 Republic of Korea

Funder

Korea Research Institute of Chemical Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200392

Reference44 articles.

1. Near-Data Processing: Insights from a MICRO-46 Workshop

2. Data-Centric Computing Frontiers

4. Limitations of Von Neumann Architecture

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1. Experimental demonstration of magnetic tunnel junction-based computational random-access memory;npj Unconventional Computing;2024-07-25

2. Reservoir Computing Using Interfacial Memristors with Native SiO_x Nanostructures Modified by Room-Temperature Plasma Oxidation;ACS Applied Nano Materials;2024-02-19

3. Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators;Nature Communications;2024-01-02

4. Ag-dispersive chalcogenide media for readily activated electronic memristor;Applied Surface Science;2024-01

5. Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing;Advanced Materials;2023-11-27

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