M 3 C 2 (OH) 2 (M = Zr and Hf): An Ideal Electrode Material for sub‐5 nm 2D Field‐Effect Transistors-Reference-Cited by-同舟云学术

M ₃ C ₂ (OH) ₂ (M = Zr and Hf): An Ideal Electrode Material for sub‐5 nm 2D Field‐Effect Transistors

Published:2022-10-13 Issue:34 Volume:9 Page:2201166
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Dong Mi‐Mi¹^ORCID,Hao Ze‐Wen¹,Niu Yue¹,Wang Chuan‐Kui¹,Fu Xiao‐Xiao¹

Affiliation:

1. Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations School of Physics and Electronics Shandong Normal University Jinan 250358 China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Taishan Scholar Project of Shandong Province

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201166

Reference63 articles.

1. Electrical contacts to two-dimensional semiconductors

2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

3. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

4. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

5. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

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