Improved V 2 O X Passivating Contact for p ‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO X Tunnel Layer-Reference-Cited by-同舟云学术

Improved V 2 O X Passivating Contact for p ‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO X Tunnel Layer

Published:2021-10-24 Issue:22 Volume:8 Page:2100989
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Du Guanlin¹²^ORCID,Li Le¹,Yang Xinbo³,Zhou Xi¹,Su Zhenhuang⁴,Cheng Peihong⁵,Lin Yinyue¹²,Lu Linfeng¹,Wang Jilei⁶,Yang Liyou⁶,Gao Xingyu⁴,Chen Xiaoyuan¹,Li Dongdong¹²⁷^ORCID

Affiliation:

1. CAS Key Lab of Low‐Carbon Conversion Science and Engineering Shanghai Advanced Research Institute Chinese Academy of Sciences 99 Haike Road, Zhangjiang Hi‐Tech Park, Pudong Shanghai 201210 China

2. School of microelectronics University of Chinese Academy of Sciences 19 Yuquan Road Beijing 100049 China

3. College of Energy Soochow Institute for Energy and Materials InnovationS (SIEMIS) Soochow University Suzhou 215006 China

4. Shanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Chinese Academy of Sciences 239 Zhangheng Road Shanghai 201204 China

5. School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road Shanghai 201210 China

6. Jinneng Clean Energy Technology LTD 533 Guang'an Street Jinzhong 030600 China

7. Dalian National Laboratory for Clean Energy Dalian 116023 China

Funder

Natural Science Foundation of Shanghai

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100989

Reference54 articles.