24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation-Reference-Cited by-同舟云学术

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Published:2020-08 Issue:1 Volume:51 Page:347-350
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Wang Sisi¹,Shi Runxiao¹,Li Jiapeng¹,Lu Lei²³,Xia Zhihe¹,Kwok Hoi Sing¹,Wong Man¹

Affiliation:

1. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay, Kowloon Hong Kong

2. The Jockey Club Institute for Advanced Study The Hong Kong University of Science and Technology Clear Water Bay, Kowloon Hong Kong

3. School of Electronic and Computer Engineering Peking University Shenzhen China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13875

Reference15 articles.

1. (Invited) Roles of Hydrogen in Amorphous Oxide Semiconductor

2. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

3. Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor

4. A study on H2 plasma treatment effect on a-IGZO thin film transistor

5. P‐1.15: A new optical compensation scheme for AMOLED displays with a‐IGZO TFT and a‐Si:H PIN diode

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2. Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation;Advanced Electronic Materials;2022-06-23

3. Elevated‐Metal Metal‐Oxide Thin‐Film Transistors: A Back‐Gate Transistor Architecture with Annealing‐Induced Source/Drain Regions;Amorphous Oxide Semiconductors;2022-05-20