24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Author:

Wang Sisi1,Shi Runxiao1,Li Jiapeng1,Lu Lei23,Xia Zhihe1,Kwok Hoi Sing1,Wong Man1

Affiliation:

1. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay, Kowloon Hong Kong

2. The Jockey Club Institute for Advanced Study The Hong Kong University of Science and Technology Clear Water Bay, Kowloon Hong Kong

3. School of Electronic and Computer Engineering Peking University Shenzhen China

Publisher

Wiley

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