Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation-Reference-Cited by-同舟云学术

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Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

Published:2022-06-23 Issue:10 Volume:8 Page:2200280
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Zhou Jitong¹,Pan Wengao¹,Zheng Dawei¹,Liu Fayang¹,Li Guijun²,Zhou Xianda³,Wang Kai³,Zhang Shengdong¹,Lu Lei¹^ORCID

Affiliation:

1. School of Electronic and Computer Engineering Shenzhen Graduate School Peking University Shenzhen 518060 China

2. College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China

3. Guangdong Province Key Laboratory of Display Materials and Technologies Sun Yat‐Sen University Guangzhou 510275 China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200280

Reference64 articles.

1. Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

2. An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

3. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes;ACS Applied Electronic Materials;2024-03-12

2. Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode;Advanced Materials Technologies;2023-06-26

3. Self-Powered Ingazno Gas Sensors Based on Metal-Semiconductor-Metal Structure with Asymmetric Interdigitated Electrodes;2023

4. Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer;Advanced Electronic Materials;2022-11-10

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