24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS
Author:
Affiliation:
1. Sharp Corporation Nara Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13874
Reference5 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. 39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs †
3. 56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT
4. 37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.
5. Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
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2. Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors;Solid-State Electronics;2022-09
3. Development of High‐Performance IGZO Backplanes for Displays;Information Display;2022-09
4. Reliability improvement of IGZO‐TFT in hybrid process with LTPS;Journal of the Society for Information Display;2021-05
5. P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS;SID Symposium Digest of Technical Papers;2021-05
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