Ab Initio Simulation of Ta 2 O 5 : A High Symmetry Ground State Phase with Application to Interface Calculation-Reference-Cited by-同舟云学术

Ab Initio Simulation of Ta 2 O 5 : A High Symmetry Ground State Phase with Application to Interface Calculation

Published:2019-04-26 Issue:8 Volume:531 Page:1800524
ISSN:0003-3804
Container-title:Annalen der Physik
language:en
Short-container-title:ANNALEN DER PHYSIK

Author:

Yuan Jun‐Hui¹,Xue Kan‐Hao¹^ORCID,Chen Qi¹,Fonseca Leonardo R. C.²,Miao Xiang‐Shui¹^ORCID

Affiliation:

1. Wuhan National Research Center for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and Technology Wuhan 430074 China

2. Departamento de FísicaICExUniversidade Federal de Minas Gerais 30123–970 Belo Horizonte MG Brazil

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Ministério da Ciência, Tecnologia, Inovações e Comunicações

Publisher

Wiley

Subject

General Physics and Astronomy

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/andp.201800524

Reference78 articles.

1. Characterization of a tantalum capacitor fabricated with a conducting polypyrrole as a counter electrode

2. Tens of GHz Tantalum pentoxide-based micro-ring all-optical modulator for Si photonics

3. Reactive HiPIMS deposition of SiO2/Ta2O5 optical interference filters

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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