P‐30: Effect of High‐k Oxide Materials on Amorphous Indium Gallium Zinc Oxide (α‐IGZO) Channel in Top Gate Field Effect Transistors

Abstract

The gate dielectric plays a significant role in improving the electrical performance of field‐effect transistors. Here, we integrated high‐k and low‐k bilayer gate dielectrics with (~10 nm) α‐IGZO FETs. Our results show that HfO2/SiO2 gated devices provide high electron mobility due to higher carrier concentration and lower trap density at the semiconductor‐gate dielectric interface.