Modern Applications of Plasma Etching and Patterning in Silicon Process Technology-Reference-Cited by-同舟云学术

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Modern Applications of Plasma Etching and Patterning in Silicon Process Technology

Published:1999 Issue:5 Volume:39 Page:473-478
ISSN:0863-1042
Container-title:Contributions to Plasma Physics
language:en
Short-container-title:Contrib. Plasma. Phys.

Author:

Engelhardt M.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference9 articles.

1. , US patent 5,563,084 (1995)

2. , P4400985. 2 German Patent

3. et al., Proc. 23rd Annual Tegal Plasma Seminar (1997) 53 and references therein

4. et al., Symp. on VLSI Tech. Dig. (1996) 28

5. et al., Proc. 2nd Int. Symp. on Plasma Process-Induced Damage (P2ID) (1997) 221

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening of spherical moulds manufactured isotropically in plasma etching conditions;Contributions to Plasma Physics;2021-04-27

2. Through-substrate vias based three-dimensional interconnection technology;Handbook of Silicon Based MEMS Materials and Technologies;2020

3. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?;Japanese Journal of Applied Physics;2018-05-25

4. Via Technologies for MEMS;Handbook of Silicon Based MEMS Materials and Technologies;2015

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