Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment-Reference-Cited by-同舟云学术

Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment

Published:2009-10-14 Issue:10 Volume:6 Page:649-657
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process. Polym.

Author:

Nest Dustin,Chung Ting-Ying,Graves David B.,Engelmann Sebastian,Bruce Robert L.,Weilnboeck Florian,Oehrlein Gottlieb S.,Wang Deyan,Andes Cecily,Hudson Eric A.

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Reference46 articles.

1. Dry Etch Resistance of Organic Materials

2. International Technology Roadmap for Semiconductors, Lithography, 2007 Edition.

3. Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist

4. Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes

5. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching

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