Interface Properties and in-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures-Reference-Cited by-同舟云学术

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Interface Properties and in-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures

Published:2002-01 Issue:1 Volume:229 Page:35-40
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Maksimov A.A.,Zaitsev S.V.,Dorozhkin P.S.,Kulakovskii V.D.,Tartakovskii I.I.,Yakovlev D.R.,Ossau W.,Hansen L.,Landwehr G.,Waag A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well

2. Laser diodes based on beryllium-chalcogenides

3. Kinetics of Radiative Recombination in Strongly Excited ZnSe/BeTe Superlattices

4. Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices

5. Interface optical anisotropy in a heterostructure with different cations and anions

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure;JETP Letters;2012-02

2. Group Theory in Semiconductor Optics;Semiconductor Optics;2012

3. Acoustic, optical, and interface phonons in BeTe/ZnSe superlattices;Physics of the Solid State;2003-08

4. Electric-field effects on the radiative recombination in type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces;Physical Review B;2002-12-18

5. Group Theory in Semiconductor Optics;Semiconductor Optics

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