Electric-field effects on the radiative recombination in type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces-Reference-Cited by-同舟云学术

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Electric-field effects on the radiative recombination in type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces

Published:2002-12-18 Issue:24 Volume:66 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zaitsev S. V.,Maksimov A. A.,Dorozhkin P. S.,Kulakovskii V. D.,Tartakovskii I. I.,Yakovlev D. R.,Ossau W.,Hansen L.,Landwehr G.,Waag A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.245310/fulltext

Reference20 articles.

1. Observation of type-I excitons and related confinement effects in type-II superlattices

2. Many-body effects and carrier dynamics in CdSe/CdS Stark superlattices

3. Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices

4. Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

5. Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties;physica status solidi (b);2014-04-03

2. Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure;JETP Letters;2012-02

3. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells;Chinese Physics B;2010-11

4. Spatially direct charged exciton photoluminescence in undoped ZnSe∕BeTe type-II quantum wells;Applied Physics Letters;2008-03-03

5. Built-in electric field and a new type of charged excitons observed in modulation-doped ZnSe/BeTe type-Ⅱ quantum well;Acta Physica Sinica;2008

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