Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well-Reference-Cited by-同舟云学术

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Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well

Published:1998-02 Issue: Volume:184-185 Page:801-805
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Platonov A.V.,Yakovlev D.R.,Zehnder U.,Kochereshko V.P.,Ossau W.,Fischer F.,Litz Th.,Waag A.,Landwehr G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Laser diodes based on beryllium-chalcogenides

2. Superlattices and Other Heterostructures;Ivchenko,1994

3. Observation of quasibound states in semiconductor single quantum barriers

4. Observation of above-barrier transitions in superlattices with small magnetically induced band offsets

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1. Optical second- and third-harmonic generation on excitons in ZnSe/BeTe quantum wells;Physical Review B;2020-09-28

2. Exciton Spectroscopy of Semiconductors by the Method of Optical Harmonics Generation (Review);Physics of the Solid State;2018-08

3. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe;Nanotechnology;2011-08-16

4. Anisotropic exciton and charged exciton dichroic photoluminescence in undoped ZnSe/BeTe type-II quantum wells in magnetic fields;Physica E: Low-dimensional Systems and Nanostructures;2010-02

5. Spatially separated indirect photoemission in undoped ZnSe/BeTe type-II quantum wells studied in pulse magnetic fields;Semiconductor Science and Technology;2009-10-09

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