1. et al., Int. Electron Devices Meet. Tech. Dig., IEEE Press, NJ, 2000 (p. 45).
2. A 40 nm gate length n-MOSFET
3. et al., Int. Electron Devices Meet. Tech. Dig., IEEE Press, NJ, 1999 (p. 55).
4. Open Problems in Quantum Simulation
in Ultra-Submicron Devices
5. and in: Solid State Physics 49, Academic Press, San Diego 1996 (pp. 283-448).