Open Problems in Quantum Simulation in Ultra-Submicron Devices-Reference-Cited by-同舟云学术

Open Problems in Quantum Simulation in Ultra-Submicron Devices

Published:1998-01-01 Issue:1-4 Volume:8 Page:165-172
ISSN:1065-514X
Container-title:VLSI Design
language:en
Short-container-title:VLSI Design

Author:

Ferry D. K.¹,Barker J. R.²

Affiliation:

1. Center for Solid State Electronics Research, Arizona State University, Tempe 85287-6206, AZ, USA

2. Department of Electrical and Electronic Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

Abstract

Quantum transport is becoming more significant as device size shrinks. For example, as device sizes are scaled below 0.1 μm, the number of impurities becomes quite small, so that they are no longer homogeneously distributed throughout the device volume and the carriers are localized into quantum boxes, in that self-energy corrections produced by locally high carrier densities will lead to quantum dot formation. This leads to the need to discuss transport through an array of such quantum structures. Here, we discuss several issues which must be considered in treating the transport through such devices.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Link

http://downloads.hindawi.com/archive/1998/020250.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effective Potential and Its Use in Simulation;physica status solidi (b);2001-07

2. Effective potentials and the onset of quantization in ultrasmall MOSFETs;Superlattices and Microstructures;2000-11

3. The onset of quantization in ultra-submicron semiconductor devices;Superlattices and Microstructures;2000-02

4. Issues in general quantum transport with complex potentials;Applied Physics Letters;1999-01-25