Structural and Optical Characteristics of InGaN/GaN Multiple Quantum Wells with Different Growth Interruption
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
3. Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
4. Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces
5. Chemical mapping and formation of V-defects in InGaN multiple quantum wells
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes;International Journal of Photoenergy;2014
2. Carrier Transport Study of TMIn-Treated InGaN LEDs by Using Quantum Efficiency and Time-Resolved Electro-Luminescence Measurements;Journal of The Electrochemical Society;2012
3. The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells;Thin Solid Films;2011-07
4. Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN∕GaN Multi-Quantum-Wells;Journal of Fluids Engineering;2008-07-30
5. Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment;Applied Physics Letters;2008-04-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3