Temperature Dependent Transport Parameters in Short GaN Structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. in: 1999 IEDM Tech. Dig. (p. 389).
2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
3. et al.,in: 1998 Device Research Conf. Dig. (p. 114).
4. and in: 1999 IEDM Tech. Digest (p. 925).
5. Monte Carlo simulation of electron transport in gallium nitride
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