High frequency GaN/AlGaN HEMT class-E power amplifier
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Class-E, a new class of high efficiency tuned single-ended switching power amplifiers;Sokal;IEEE J Solid-State Circ,1975
2. A 1.9 GHz 1-W CMOS Class-E power amplifier for wireless communications;Tsai;IEEE J Solid-State Circ,1999
3. Low voltage, high efficiency GaAs class-E power amplifiers for wireless transmitters;Sowlati;IEEE J Solid-State Circ,1995
4. Evaluation of AlGaN/GaN HFETs up to 750 °C;Daumiller;Dev Res Conf Dig,1998
5. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans Electron Dev,2001
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1. Class-E power amplifiers with shunt capacitance;Switchmode RF and Microwave Power Amplifiers;2021
2. Class-E with Shunt Capacitance;Switchmode RF and Microwave Power Amplifiers;2012
3. Class E with Shunt Capacitance;Switchmode RF Power Amplifiers;2007
4. SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER;Selected Topics in Electronics and Systems;2005
5. High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC;IEEE Electron Device Letters;2003-11
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