Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire
2. Guided elastic waves in GaN-on-sapphire
3. Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss
4. Surface Acoustic Wave Velocity and Electromechanical Coupling Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapour Phase Epitaxy
5. Interaction of ultrasonic surface waves with conduction electrons in thin metal films
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3. Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility;Electronic Materials Letters;2014-11
4. Impact of gamma irradiation on GaN/sapphire surface acoustic wave resonators;2014 IEEE International Ultrasonics Symposium;2014-09
5. Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy;Applied Physics Letters;2014-08-11
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