Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy

Published:2014-08-11 Issue:6 Volume:105 Page:062108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fan Yingmin¹²,Liu Zhenghui¹,Xu Gengzhao¹,Zhong Haijian¹,Huang Zengli¹,Zhang Yumin¹²³,Wang Jianfeng¹³,Xu Ke¹³

Affiliation:

1. Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China

2. University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

3. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893156

Reference28 articles.

1. Nitride‐based surface acoustic wave devices and applications

2. Impact of Photocapacitance on Phase Response of GaN/Sapphire SAW UV Sensor

3. Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

4. Remote collection and measurement of photogenerated carriers swept by surface acoustic waves in GaN

5. Visible–blind photoresponse of GaN-based surface acoustic wave oscillator

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1. GaN surface acoustic wave filter with low insertion loss;Ultrasonics;2023-07

2. Growth and doping of bulk GaN by hydride vapor phase epitaxy*;Chinese Physics B;2020-02-01

3. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates*;Chinese Physics B;2019-06-01

4. Guided acoustic wave sensors for liquid environments;Journal of Physics D: Applied Physics;2019-02-06

5. Homoepitaxy of GaN Light-Emitting Diodes;Light-Emitting Diodes;2019

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