Silicon-doping induced strain of AlN layers: a comparative luminescence and Raman study
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference8 articles.
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1. Structure and cathodoluminescence properties of Dy3+ and Eu3+ co-doped AlN films;Optical Materials;2022-06
2. Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD;AIP Advances;2020-04-01
3. Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth;Journal of Crystal Growth;2017-03
4. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
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