MOVPE growth of high quality AlN layers and effects of Si doping
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Reliability of AlGaN-based deep UV LEDs on sapphire
3. GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
4. An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire;Crystal Growth & Design;2024-09-12
2. Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE;Materials Science in Semiconductor Processing;2022-05
3. Bipolar pulsed reactive magnetron sputtering of epitaxial AlN- films on Si(111) utilizing a technology suitable for 8″ substrates;Surface and Coatings Technology;2022-01
4. Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth;Journal of Crystal Growth;2017-03
5. Low Dislocation Densities of Nitride-Based Light-Emitting Diodes with a Preflow of NH3Source before Growth of AlN Buffer Layer;Japanese Journal of Applied Physics;2013-01-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3