Theoretical study of Raman scattering in MoS 2 x Se 2(1 − x ) layered alloys-Reference-Cited by-同舟云学术

Theoretical study of Raman scattering in MoS 2 x Se 2(1 − x ) layered alloys

Published:2021-04-18 Issue:6 Volume:52 Page:1193-1205
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Romaniuk Yurii A.¹²^ORCID,Golovynskyi Sergii¹²^ORCID,Li Baikui¹^ORCID,Qu Junle¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China

2. V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences Kyiv Ukraine

Funder

National Natural Science Foundation of China

Science and Technology Planning Project of Guangdong Province

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6109

Reference52 articles.

1. 2D materials and van der Waals heterostructures

2. Van der Waals 2D layered-material bipolar transistor

3. Mixed-dimensional van der Waals heterostructures

4. Nanoscale electronic devices based on transition metal dichalcogenides

5. Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence

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