Site selective doping of Zn for the p ‐type Cu(In,Ga)Se 2 thin film for solar cell application
Author:
Affiliation:
1. Faculty of EngineeringEhime UniversityMatsuyama 790‐8577Japan
2. Tokyo University of ScienceResearch Institute for Science and TechnologyNodaChiba 278‐8510Japan
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201600170
Reference10 articles.
1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%
2. Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap
3. Prospects of wide-gap chalcopyrites for thin film photovoltaic modules
4. Band-gap grading in Cu(In,Ga)Se2 solar cells
5. Formation of pn Homojunction in Cu(InGa)Se2Thin Film Solar Cells by Zn Doping
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1. Numerical Simulation, Preparation, and Evaluation of Cu(In, Ga)Se2 (CIGS) Thin-Film Solar Cells;ChemEngineering;2023-09-15
2. Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements;Solar RRL;2023-02-28
3. Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives;Materials Horizons;2023
4. Research Progress of the Stability and Photodetectors Applications of Organic-inorganic Hybrid Halide Perovskite Materials (Invited);ACTA PHOTONICA SINICA;2021
5. A Study of Doping Profile for the Site Selectively Zn‐Doped p ‐type Cu(In,Ga)Se 2 Thin Film for Solar Cell;physica status solidi (a);2019-04-26
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