Formation of pn Homojunction in Cu(InGa)Se2Thin Film Solar Cells by Zn Doping-Reference-Cited by-同舟云学术

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Formation of pn Homojunction in Cu(InGa)Se2Thin Film Solar Cells by Zn Doping

Published:2000-08-15 Issue:Part 1, No. 8 Volume:39 Page:4816-4819
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugiyama Takeshi,Chaisitsak Sutichai,Yamada Akira,Konagai Makoto,Kudriavtsev Yuriy,Godines Antonio,Villegas Antonio,Asomoza Rene

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sn_1–xGe_xO_y and Zn_1–xGe_xO_y by Atomic Layer Deposition─Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in (Ag,Cu)(In,Ga)Se₂ Solar Cells;ACS Applied Energy Materials;2023-09-22

2. Cu(InGa)Se2 Solar Cell;Semiconductor Photovoltaic Cells;2021

3. Unassisted Water Splitting Exceeding 9% Solar-to-Hydrogen Conversion Efficiency by Cu(In, Ga)(S, Se)2 Photocathode with Modified Surface Band Structure and Halide Perovskite Solar Cell;ACS Applied Energy Materials;2020-02-25

4. A Study of Doping Profile for the Site Selectively Zn‐Doped p ‐type Cu(In,Ga)Se 2 Thin Film for Solar Cell;physica status solidi (a);2019-04-26

5. Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells;IEEE Journal of Photovoltaics;2019-01

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