A new approach to grow C-doped GaN thick epitaxial layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The role of carrier gas on the structural properties of carbon coated GaN;Materials Today Communications;2021-06
2. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector;physica status solidi (a);2020-09-03
3. Growth of Bulk GaN from Gas Phase;Crystal Research and Technology;2018-03-12
4. Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals;Applied Physics Express;2017-03-29
5. Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method;Vacuum;2016-11
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