Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs-Reference-Cited by-同舟云学术

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Published:2011-06-01 Issue:7-8 Volume:8 Page:2427-2429
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Brunner Frank,Bahat-Treidel Eldad,Cho Melanie,Netzel Carsten,Hilt Oliver,Würfl Joachim,Weyers Markus

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Point Defects in GaN;Semiconductors and Semimetals;2022

2. Carbon complexes in highly C-doped GaN;Physical Review B;2021-08-05

3. Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors;Journal of Crystal Growth;2020-03

4. Suppression of Iron Memory Effect in GaN Epitaxial Layers;physica status solidi (b);2017-10-18

5. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities;Power Electronics and Power Systems;2016-09-09

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