Carbon complexes in highly C-doped GaN-Reference-Cited by-同舟云学术

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Carbon complexes in highly C-doped GaN

Published:2021-08-05 Issue:7 Volume:104 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lyons John L.^ORCID,Glaser Evan R.,Zvanut Mary Ellen,Paudel Subash^ORCID,Iwinska Malgorzata,Sochacki Tomasz^ORCID,Bockowski Michal^ORCID

Funder

Office of Naval Research

U.S. Naval Research Laboratory

Fundacja na rzecz Nauki Polskiej

European Regional Development Fund

National Science Foundation

U.S. Department of Energy

U.S. Department of Defense

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.075201/fulltext

Reference54 articles.

1. Resistivity control in unintentionally doped GaN films grown by MOCVD

2. Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures

3. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

4. Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free‐standing GaN

5. Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alleviation of the on-state dynamic conductance decline in a GaN high electron mobility transistor with heavy carbon doping;Japanese Journal of Applied Physics;2024-04-01

2. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-04-01

3. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy;Applied Physics Letters;2024-01-29

4. Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters;ACS Photonics;2023-10-05

5. Role of the GaN-on-Si Epi-Stack on ΔR _ON Caused by Back-Gating Stress;IEEE Transactions on Electron Devices;2023-10

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