Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method-Reference-Cited by-同舟云学术

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Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method

Published:2011-04-21 Issue:7-8 Volume:8 Page:2107-2109
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Sumathi R. R.,Barz R. U.,Gille P.,Straubinger T.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface;Crystal Growth & Design;2024-02-05

2. A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality;Materials Science Forum;2022-05-31

3. Silicon-integrated monocrystalline oxide–nitride heterostructures for deep-ultraviolet optoelectronics;Optical Materials Express;2021-12-01

4. Obstructions to weak approximation for reductive groups over p-adic function fields;Journal of Number Theory;2021-03

5. Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates;ECS Journal of Solid State Science and Technology;2021-02-26

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