Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors-Reference-Cited by-同舟云学术

Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors

Published:2017-04-05 Issue:7 Volume:14 Page:1700036
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Okuyama Ryosuke¹,Shigematsu Satoshi¹,Hirose Ryo¹,Masada Ayumi¹,Kadono Takeshi¹,Koga Yoshihiro¹,Okuda Hidehiko¹,Kurita Kazunari¹

Affiliation:

1. SUMCO Corporation1‐52 KubaraYamashiro‐cho, Imari‐shiSaga 849‐4256Japan

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700036

Reference31 articles.

1. Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2. R.Okuyama A.Masada T.Kadono R.Hirose Y.Koga H.Okuda andK.Kurita in: Procs. The 18th Scientific International Symposium on SIMS and Related Techniques Based on Ion‐Solid Interactions (Tokyo Japan 2016) pp.20

3. Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

4. The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures

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