Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD)-Reference-Cited by-同舟云学术

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Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD)

Published:2011-04-21 Issue:7-8 Volume:8 Page:2019-2021
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Claudel Arnaud,Chowanek Yann,Blanquet Elisabeth,Chaussende Didier,Boichot Raphaël,Crisci Alexandre,Berthomé G.,Mank Hugues,Luca Sorana,Pique Didier,Pons Michel

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21

2. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

3. Pulsed DC Sputtering of Highly c ‐Axis AlN Film on Top of Si (111) Substrate;physica status solidi (b);2021-04-14

4. Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling;Journal of Applied Physics;2020-05-29

5. Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power;Journal of Materials Science: Materials in Electronics;2019-12-05

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