Impact of interface traps on switching behavior of normally-OFF AlGaN/GaN MOS-HEMTs-Reference-Cited by-同舟云学术

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Impact of interface traps on switching behavior of normally-OFF AlGaN/GaN MOS-HEMTs

Published:2016-02-03 Issue:5-6 Volume:13 Page:328-331
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Shi Yuanyuan,Zhou Qi,Jin Yang,Chen Bowen,Chen Wanjun,Huang Wei,Zhang Bo

Funder

National Science and Technology Major Project 02

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs;ECS Journal of Solid State Science and Technology;2019

2. Fabless design approach for lateral optimization of low voltage GaN power HEMTs;Superlattices and Microstructures;2018-09

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