STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells-Reference-Cited by-同舟云学术

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STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells

Published:2015-02-27 Issue:4-5 Volume:12 Page:469-472
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Kemper R. M.,Veit P.,Mietze C.,Dempewolf A.,Wecker T.,Bertram F.,Christen J.,Lindner J. K. N.,As D. J.

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201400154/fullpdf

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well;Nanotechnology;2024-07-11

2. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN;ACS Applied Materials & Interfaces;2023-08-02

3. Impact of AlN buffer layers on MBE grown cubic GaN layers;Gallium Nitride Materials and Devices XVIII;2023-03-15

4. Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy;Journal of Applied Physics;2023-03-09

5. AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC;Crystal Growth & Design;2022-10-06

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