Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire-Reference-Cited by-同舟云学术

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Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire

Published:2014-02 Issue:3-4 Volume:11 Page:798-801
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Asif Fatima,Chen Hung-Chi,Coleman Antwon,Ahmad Iftikhar,Zhang Bin,Dion Joe,Heidari Ahmad,Adivarahan Vinod,Khan Asif

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction;Applied Physics Express;2021-02-24

2. A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures;Journal of Applied Physics;2018-07-21

3. UV C luminescence of a modified zirconium silicate framework upon cathode ray and VUV excitation;Journal of Luminescence;2018-06

4. Design of Al-rich AlGaN quantum well structures for efficient UV emitters;SPIE Proceedings;2017-02-16

5. Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11

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