Design of Al-rich AlGaN quantum well structures for efficient UV emitters-Reference-Cited by-同舟云学术

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Design of Al-rich AlGaN quantum well structures for efficient UV emitters

Published:2017-02-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Funato Mitsuru¹,Ichikawa Shuhei¹,Kumamoto Kyosuke¹,Kawakami Yoichi¹

Affiliation:

1. Kyoto Univ. (Japan)

Publisher

SPIE

Reference16 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes;Pernot,2010

3. High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance;Grandusky,2011

4. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%;Shatalov,2012

5. 270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power;Grandusky,2013

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