Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires-Reference-Cited by-同舟云学术

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Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

Published:2013-03-11 Issue:4 Volume:10 Page:667-672
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Rodrigues J.,Miranda S. M. C.,Fernandes A. J. S.,Nogales E.,Alves L. C.,Alves E.,Tourbot G.,Auzelle T.,Daudin B.,Méndez B.,Trindade T.,Lorenz K.,Costa F. M.,Monteiro T.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb;Journal of Luminescence;2019-06

2. First-principles study of CN point defects on sidewall surface of [0 0 0 1]-oriented GaN nanowires;Applied Surface Science;2019-02

3. ZnO decorated laser-induced graphene produced by direct laser scribing;Nanoscale Advances;2019

4. Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures;Surface and Coatings Technology;2018-12

5. A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation;Nanotechnology;2017-08-08

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