A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation-Reference-Cited by-同舟云学术

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A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

Published:2017-08-08 Issue:36 Volume:28 Page:365702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Park Byung-Guon,Lee Sang-Tae,Reddeppa Maddaka,Kim Moon-Deock,Oh Jae-Eung,Lee Sang-Kwon

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=36/a=365702/pdf

Reference30 articles.

1. First-Principles Surface Phase Diagram for Hydrogen on GaN Surfaces

2. Interaction of hydrogen with gallium vacancies in wurtzite GaN

3. Hydrogen passivation of deep levels in n–GaN

4. Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector;Semiconductor Science and Technology;2021-02-04

2. Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods;Nanotechnology;2020-09-07

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