P‐232: Laser Assisted Plasma Enhanced Chemical Vapor Deposition for Damage‐Resistive and Reliable Thin Film Encapsulation of Organic Light Emitting Diodes-Reference-Cited by-同舟云学术

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P‐232: Laser Assisted Plasma Enhanced Chemical Vapor Deposition for Damage‐Resistive and Reliable Thin Film Encapsulation of Organic Light Emitting Diodes

Published:2020-08 Issue:1 Volume:51 Page:1572-1575
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

An Kunsik¹,Lee Ho-Nyun²,Cho Kwan Hyun¹,Lee Seung‐Woo³,Choi Sung‐Hwan¹,Hwang David J.⁴,Kang Kyung-Tae¹

Affiliation:

1. Micro/Nano Process Group Korea Institute of Industrial Technology (KITECH) Ansan 15588 Republic of Korea

2. Surface Technology Group Korea Institute of Industrial Technology (KITECH) Incheon 21999 Republic of Korea

3. Department of Mechanical Engineering Hanyang University Seoul 04763 Republic of Korea

4. Department of Mechanical Engineering State University of New York Stony Brook NY 11794 USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14192

Reference4 articles.

1. Laser-assisted plasma-enhanced chemical vapor deposition of silicon nitride thin film

2. CO2-Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Thin Film

3. Effect of CO₂ Laser on SiN_x Films Fabricated by Low-Temperature Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

4. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

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