Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide
Author:
Affiliation:
1. School of Mechanical Engineering Tianjin University of Commerce Tianjin 300134 China
2. State Key Laboratory of Precision Measuring Technology & Instruments Tianjin University Tianjin 300072 China
Funder
Tianjin Science and Technology Committee
National Natural Science Foundation of China
Publisher
Wiley
Subject
Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202100113
Reference38 articles.
1. A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide
2. Brittle–ductile transition during diamond turning of single crystal silicon carbide
3. Influence of vibration parameters on ultrasonic elliptical vibration cutting of reaction-bonded silicon carbide
4. Theoretical and Experimental Studies of Over-Polishing of Silicon Carbide in Annular Polishing
5. Effect of ion implantation on material removal mechanism of 6H-SiC in nano-cutting: A molecular dynamics study
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1. Molecular dynamics analysis of subsurface brittleness mechanism of nanocrystalline 3C-SiC rough friction surface;Scientific Reports;2024-08-06
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3. Molecular Dynamics Analysis of Subsurface Brittleness Mechanism of Nanocrystalline 3C-SiC Rough Friction Surface;2024-03-04
4. Material Removal Mechanism and Evolution of Subsurface Defects during Nanocutting of Monocrystalline Cu;Nanomaterials and Nanotechnology;2023-12-13
5. Influence of the metal coating on nano-cutting process of cubic silicon carbide;Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology;2023-10-12
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