Brittle–ductile transition during diamond turning of single crystal silicon carbide-Reference-Cited by-同舟云学术

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Brittle–ductile transition during diamond turning of single crystal silicon carbide

Published:2013-02 Issue: Volume:65 Page:15-21
ISSN:0890-6955
Container-title:International Journal of Machine Tools and Manufacture
language:en
Short-container-title:International Journal of Machine Tools and Manufacture

Author:

Goel Saurav,Luo Xichun,Comley Paul,Reuben Robert L,Cox Andrew

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering

Reference42 articles.

1. SiC technology;Neudeck,2000

2. Quantum computing: diamond and silicon converge;Dzurak;Nature,2011

3. Precision engineering for astronomy and gravity science;Shore;CIRP Annals—Manufacturing Technology,2010

4. Numerical simulations and cutting experiments on single point diamond machining of semiconductors and ceramics;Patten,2007

5. Ductile regime material removal of silicon carbide (SiC);Ravindra,2011

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